Quantum tunneling mechanisms in monolayer graphene modulated by multiple electrostatic barriers

Mechanically modulated tunneling resistance in monolayer MoS2

Thermodynamic Properties of electrically modulated monolayer Graphene

Abstract Theoretical investigation of thermodynamic properties of electrically modulated monolayer graphene in the presence of a perpendicular magnetic field B is presented. This work is aimed at determining the modulation induced effects on the thermodynamic properties of electrically modulated graphene.The results obtained are compared with those of the conventional 2DEG. The one-dimensional ...

Tunable quantum dots in monolayer graphene

We examine a graphene quantum dot formed by combining an electric and a uniform magnetic field. The electric field creates a smooth quantum well potential while the magnetic field induces an exponential tail to the dot states. The states peak in the well and the electrostatic barrier region as a result of the Klein tunneling effect. Coupling between dot states which peak in different regions ca...

Resonant tunneling in graphene pseudomagnetic quantum dots.

Realistic relaxed configurations of triaxially strained graphene quantum dots are obtained from unbiased atomistic mechanical simulations. The local electronic structure and quantum transport characteristics of y-junctions based on such dots are studied, revealing that the quasi-uniform pseudomagnetic field induced by strain restricts transport to Landau level- and edge state-assisted resonant ...

Insulator-quantum Hall transitionin monolayer epitaxial graphene.

We report on magneto-transport measurements on low-density, large-area monolayer epitaxial graphene devices grown on SiC. We observe temperature (T)-independent crossing points in the longitudinal resistivity ρxx, which are signatures of the insulator-quantum Hall (I-QH) transition, in all three devices. Upon converting the raw data into longitudinal and Hall conductivities σxx and σxy, in the ...